? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1000 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c38a i dm t c = 25 c, pulse width limited by t jm 152 a i ar t c = 25 c38a e ar t c = 25 c60mj e as t c = 25 c 5.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 890 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c f c mounting force 30...120/7.5...27 n/lb weight 10 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1ma 1000 v v gs(th) v ds = v gs , i d = 8ma 2.5 5.0 v i gss v gs = 30 v, v ds = 0 200 na i dss v ds = v dss t j = 25 c 50 a v gs = 0 v t j = 125 c 3 ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 0.25 ? note 1 ds98949d(06/03) plus 264 tm (ixfb) g = gate d = drain s = source tab = drain s g d (tab) hiperfet tm power mosfets n-channel enhancement mode avalanche rated, low q g , low intrinsic r g high dv/dt, low t rr features z double metal process for low gate resistance z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z fast intrinsic rectifier applications z dc-dc converters z switched-mode and resonant-mode power supplies, >500khz switching z dc choppers z pulse generation z laser drivers advantages z plus 264 tm package for clip or spring mounting z space savings z high power density IXFB38N100Q2 v dss = 1000 v i d25 = 38 a r ds(on) = 0.25 ? ? ? ? ? t rr 300 ns preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. IXFB38N100Q2 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 ? i d25 note 1 24 40 s c iss 7200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 950 pf c rss 170 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 28 ns t d(off) r g = 1 ? (external) 57 ns t f 15 ns q g(on) 250 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 60 nc q gd 105 nc r thjc 0.14 k/w r thck 0.13 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 38 a i sm repetitive; 152 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 300 ns q rm 1.4 c i rm 9a i f = 25a -di/dt = 100 a/ s v r = 100 v terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 264 tm outline note: 1. pulse test, t 300 s, duty cycle d 2 %
? 2003 ixys all rights reserved fig. 2. extended output characteristics @ 25 deg. c 0 15 30 45 60 75 0 5 10 15 20 25 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 5v 6v fig. 3. output characteristics @ 125 deg. c 0 9 18 27 36 45 0 5 10 15 20 25 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 1. output characteristics @ 25 deg. c 0 4 8 12 16 20 01234567 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d25 v alue vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized i d = 38a i d = 19a fig. 6. drain current vs. case temperature 0 8 16 24 32 40 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to i d25 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 020406080 i d - amperes r ds(on) - normalized t j = 125 c t j = 25 c IXFB38N100Q2
ixys reserves the right to change limits, test conditions, and dimensions. IXFB38N100Q2 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 fig. 9. source current vs. source-to- drain voltage -100 -80 -60 -40 -20 0 -1.3 -1.1 -0.9 -0.7 -0.5 -0.3 v sd - volts i s - amperes t j = 125 c t j = 25 c fig. 11. capacitance 100 1000 10000 010203040 v ds - volts capacitance - pf ciss coss crss f=1mhz fig. 10. gate charge 0 2 4 6 8 10 0 50 100 150 200 250 q g - nanocoulombs v gs - volts v ds = 500v i d = 19a i g = 10ma fig. 7. input admittance 0 8 16 24 32 40 3 3.5 4 4.5 5 5.5 6 v gs - volts i d - amperes t j = -40 c 25 c 125 c fig. 12. maximum transient thermal re si sta nce 0.01 0.1 1 1 10 100 1000 pulse width - milli seconds r (th)jc - (oc/w) fig. 8. transconductance 0 15 30 45 60 75 010203040 i d - amperes g fs - siemens t j = 25 c t j = 125 c t j = -40 c
|
